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| Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SA1162 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 : 150 mW (Tamb=25) 0. 0. 95 A 025 2. 80 A 05 0. 1. 60 A0. 05 Collector current : 150 mA ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100A, IE=0 Ic=-1mA, IB=0 IE=-100A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, Ic=0.1mA, f=1KHZ, Rg=10K -50 -50 -5 -0.1 -0.1 70 400 -0.3 80 7 0. 35 2. 92 A0. 05 1. 9 A A V MHz pF fT Cob Noise figure NF 10 dB CLASSIFICATION OF hFE(1) Rank Range Marking O 70-140 SO Y 120-240 SY GR 200-400 SG |
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